publication venue for

• "Effects of interfacial organic layers on thin film nucleation in atomic layer deposition"
• "Low-dissipation capillary switches at small scales"
• "Nucleation of pentacene on silicon dioxide at hyperthermal energies"
• "Nucleation of pentacene thin films on silicon dioxide modified with hexamethyldisilazane"
• 10-Nm Linewidth Electron-Beam Lithography on Gaas
• 1st and 2nd Order Twin Boundaries in Edge Defined Film Growth-Silicon Ribbon
• 2nd Harmonic Conversion in Cubic Silicon-Carbide at 1.06-Mu-M
• 4H SiC Betavoltaic Powered Temperature Transducer
• 75 angstrom GaN channel modulation doped field effect transistors
• A Growth Method for Creating Arrays of Atomically Flat Mesas on Silicon
• A Modified Landau-Devonshire Thermodynamic Potential for Strontium TItanate
• A New Technique for Gettering Oxygen and Moisture from Gases Used in Semiconductor Processing
• A Silicon Nano-Crystals Based Memory
• A Silicon Nano-Crystals Based Memory
• A Universal Semiempirical Model for the Fowler-Nordheim Programming of Charge Trapping Devices
• A growth method for creating arrays of atomically flat mesas on silicon
• A megahertz nanomechanical resonator with room temperature quality factor over a million
• A1GaInP/GaAs Red Edge-Emitting Diodes for Polymer Optical Fiber Applications
• Absence of Solute Drag in Solidification
• Accumulated Body Ultranarrow Channel Silicon Transistor With Extreme Threshold Voltage Tunability
• Acoustic Bragg Mirrors and Cavities Made using Piezoelectric Oxides
• Activation Characteristics of a Long-Wavelength Infrared Hot-Electron Transistor
• Adsorption-Controlled Growth of BiMnO₃ Films by Molecular-Beam Epitaxy
• Adsorption-Controlled Growth of EuO by Molecular-Beam Epitaxy
• Adsorption-Controlled Molecular-Beam Epitaxial Growth of BiFeO₃
• AlGaN GaN heterostructures on insulating AlGaN nucleation layers
• Amorphous Lanthanum Lutetium Oxide Thin Films as an Alternative High-k Gate Dielectric
• Amorphous lanthanide-doped TiO_x dielectric films
• An Empirical Fit to Band Discontinuities and Barrier Heights in III-V Alloy Systems
• Analysis of Diffusion in Polymers by Forward Recoil Spectrometry
• Anisotropic Critical Currents In Ba₂ YCu₃ O₇ Analyzed Using An Extended Bean Model
• Anisotropic Suspension Display
• Anisotropic Ultrasonic Wave Propagation in a Nematic Liquid Crystal Placed in a Magnetic Field
• Annealing Condition Optimization and Electrical Characterization of Amorphous LaAlO₃ /GaAs Metal-Oxide- Semiconductor Capacitors
• Anomalous Hall effect suppression in anatase Co:TiO2 by the insertion of an interfacial TiO2 buffer layer
• Arsine Flow Requirement for the Flow Modulation Growth of High-Purity Gaas Using Adduct-Grade Triethylgallium
• Atomic Structure of the Interface between SrTiO₃ Thin Films and Si(001) Substrates
• Atomic-scale characterization of a Co/AlOx/Co magnetic tunnel junction by scanning transmission electron microscopy
• Autoparametric optical drive for micromechanical oscillators
• Ballistic Electron Studies and Modification of the Au/Si Interface
• Ballistic Electron-Emission Microscopy of Laterally Patterned Microstructures
• Ballistic electron magnetic microscopy: Imaging magnetic domains with nanometer resolution
• Ballistic electron microscopy study of ultrathin oxidized aluminum barriers for magnetic tunnel junctions
• Ballistic-Electron-Emission Microscopy Characteristics of Reverse-Biased Schottky Diodes
• Band Alignment between (100) Si and Amorphous LaAlO₃ , LaScO₃ , and Sc₂ O₃ : Atomically Abrupt versus Interlayer-Containing Interfaces
• Band Offsets between Si and Epitaxial Rare Earth Sesquioxides (RE₂ O₃ , RE=La, Nd, Gd, Lu): Effect of 4f-Shell Occupancy
• Barrier and Recombination Effects in the Base-Emitter Junction of Heterostructure Bipolar Transistors
• Basal plane oxygen vapor pressure of Co-doped YBa2Cu3O7-delta
• Beam Energy Effects in Electron-Beam Lithography - the Range and Intensity of Backscattered Exposure
• Behavior of Intrinsic Si Point-Defects during Annealing in Vacuum
• Breakdown of Thermionic Emission Theory for Quantum-Wells
• Broadband Dielectric Spectroscopy of Ruddlesden- Popper Sr_n+1 Ti_n O_3n+1 (n = 1, 2, 3) Thin Films
• Broadband dielectric spectroscopy of Ruddlesden-Popper Srn+1TinO3n+1 (n=1,2,3) thin films
• Cantilever effects on the measurement of electrostatic potentials by scanning Kelvin probe microscopy
• Capacitance-Voltage Characteristics of BiFeO₃ /SrTiO₃ /GaN Heteroepitaxial Structures
• Capacitively Shunted Variable-Thickness Microbridges
• Capped Versus Capless Heat-Treatment of Molecular-Beam Epitaxial Gaas
• Cascaded light-emitting devices based on a ruthenium complex
• Cathodoluminescence and photoluminescence analysis of InxGa1-xAs/GaAs quantum well structures
• Chaos in an additive-pulse mode-locked laser
• Characterization and Optical-Properties of Arrays of Small Gold Particles
• Characterization of Individual Electron Traps in Amorphous Si by Telegraph Noise Spectroscopy
• Clean Grain-Boundaries and Weak Links in High-Tc Superconducting Yba2cu3o7-X Thin-Films
• Coefficient of thermal expansion and biaxial elastic modulus of B phase tantalum thin films
• Combinatorial discovery of a lead-free morphotropic phase boundary in a thin-film piezoelectric perovskite
• Combinatorial discovery of a lead-free morphotropic phase boundary in a thin-film piezoelectric perovskite
• Combinatorial investigation of magnetostriction in Fe-Ga and Fe-Ga-Al
• Comparison of high field electron transport in GaN and GaAs
• Comparison of the Theoretical and Experimental Differential Gain in Strained Layer Ingaas/Gaas Quantum-Well Lasers
• Composition-dependent crystallization of alternative gate dielectrics
• Conduction Band Energies and Hot-Electron Transport Characteristics of Epitaxial Sc₂ O₃ /Si (111) Studied by Ballistic Electron Emission Microscopy and Internal Photoemission
• Contact issues in electroluminescent devices from ruthenium complexes
• Controlling energy dissipation and stability of micromechanical silicon resonators with self-assembled monolayers
• Convenient Optical Pressure Gauge for Multimegabar Pressures Calibrated to 300 GPa
• Current Fluctuations and Silicon-Oxide Wear-out in Metal-Oxide-Semiconductor Tunnel-Diodes
• Current-Phase Relations as Determinants of Superconducting Thin-Film Weak-Link Iv Characteristics
• Current-induced realignment of magnetic domains in nanostructured Cu/Co multilayer pillars
• Current-induced realignment of magnetic domains in nanostructured Cu/Co multilayer pillars
• Dc Characterization of the Algaas/Gaas Tunneling Emitter Bipolar-Transistor
• Dc and Rf Measurements of the Kink Effect in 0.2-Mu-M Gate Length Alinas Galnas Inp Modulation-Doped Field-Effect Transistors
• Deep donor state of vanadium in cubic silicon-carbide (3C-SiC)
• Degradation of hole injection at the contact between a conducting polymer and a fluorene copolymer
• Demonstration of Laser-Assisted Epitaxial Deposition of Gexsi1-X Alloys on Single-Crystal Si
• Demonstration of a 4H SiC betavoltaic cell
• Density of Amorphous Si
• Dependence of the Electrical Characteristics of Heavily Ge-Doped Gaas on Molecular-Beam Epitaxy Growth-Parameters
• Determination of Electron-Energy Distribution in a Gaas Vertical Field-Effect Transistor with Hot-Electron Injection
• Determination of Nonradiative Surface-Layer Thickness in Quantum Dots Etched from Single Quantum Well Gaas/Algaas
• Device Quality A1Ga-As/GaAs Heterostructures Grown in a Multichamber Organometallic Vapor-Phase Epitaxial Apparatus
• Dielectric and Optical Properties of Epitaxial Rare-Earth Scandate Films and their Crystallization Behavior
• Diffusion of Reactive Ion Beam Etched Polymers
• Diffusion of Reactive Ion Beam Etched Polymers
• Direct Demonstration of a Misfit Strain-Generated Electric-Field in a [111] Growth Axis Zincblende Heterostructure
• Direct band gap structures on nanometer-scale, micromachined silicon tips
• Direct in situ characterization of Ge surface segregation in strained Si1-xGex epitaxial thin films
• Direct melt processing of pentacene at temperatures above 1000 degrees C by pulsed laser irradiation
• Disordering, Intermixing, and Thermal-Stability of GaInP/AIInP Superlattices and Alloys
• Dispersion properties of aluminum nitride as measured by an optical waveguide technique
• Dissipation in nanocrystalline-diamond nanomechanical resonators
• Dissociative Adsorption of Si2H6 on Silicon at Hyperthermal Energies: The Influence of Surface-Structure
• Doping by metal-mediated epitaxy: Growth of As delta-doped Si through a Pb monolayer
• Double Modulation-Doped Algaas/Ingaas Heterostructure with a Graded Composition in the Quantum-Well
• Dynamically tuning properties of epitaxial colossal magnetoresistance thin films
• Effect of 90Domain Movement on the Piezoelectric Response of Patterned PbZr0.2Ti0.8O3/SrTiO3/Si Heterostructures
• Effect of Coincident Ion-Bombardment on the Oxidation of Si(100) by Atomic Oxygen
• Effect of PH3 on the Dissociative Chemisorption of SiH4 and Si2H6 on Si(100): Implications on the Growth of in-Situ Doped Si Thin-Films
• Effect of Thermionic-Field Emission on Effective Barrier Height Lowering in In0.52al0.48as Schottky Diodes
• Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy
• Effect of backing layer thickness on adhesion of single-level elastomer fiber arrays
• Effect of nanoscale surface roughness on transverse energy spread from GaAs photocathodes
• Effect of phosphorus composition on the structural quality of GaInP/GaAsP short-period superlattices
• Effects of Compressive and Tensile Uniaxial Stress on the Operation of Quantum-Well Lasers
• Effects of Linewidth, Microstructure, and Grain Growth on Voiding in Passivated Copper Lines
• Effects of Nonuniform Well Width on Compressively Strained Multiple Quantum-Well Lasers
• Effects of Rapid Thermal Annealing and Sio2 Encapsulation on Gainas/Alinas Heterostructures
• Electrical Characterization of Amorphous Lanthanum Aluminate Thin Films Grown by Molecular Beam Deposition on Silicon
• Electrical and Magnetic Properties of (SrMnO₃ )n/(LaMnO₃ )2n Superlattices
• Electrical cutting and nicking of carbon nanotubes using an atomic force microscope
• Electron Drift Velocity in AlGaN/GaN Channel at High Electric Fields
• Electron Energy Barriers at Interfaces of GaAs(100) with LaAlO₃ and Gd₂ O₃
• Electron Mobility in p-type GaAs
• Electron Tunneling Spectroscopy Study of Amorphous Films of the Gate Dielectric Candidates LaAlO₃ and LaScO₃
• Electronic properties of a 3C/4H SiC polytype heterojunction formed on the Si face
• Electroreflectance Investigation of (Ga1-Xalx)0.47in0.53as Lattice Matched to Inp
• Elimination of Interface Defects in Mismatched Epilayers by a Reduction in Growth Area
• Emission of Coherent terahertz radiation from SiC
• Enhanced Strain Amplitude Dependence of Internal Friction in the Mixed State of Niobium
• Enrichment Depth Profiles in Polymer Blends Measured by Forward Recoil Spectrometry (FRES)
• Epitaxial (001) BiFeO₃ Membranes with Substantially Reduced Fatigue and Leakage
• Epitaxial Growth and Magnetic Properties of the First Five Members of the Layered Sr_n+1 RunO_3n+1 Oxide Series
• Epitaxial Integration of (0001) BiFeO₃ with (0001) GaN
• Epitaxial ZnO Films on (111) Si Substrates with Sc₂ O₃ Buffer Layers
• Epitaxially Stabilized Growth of Orthorhombic LuScO₃ Thin Films
• Er3 + Strong Light-Confining Microactivity
• Erratum: ‘Properties of MgB₂ Thin Films with Carbon Doping,’ [Appl. Phys. Lett. 85, 2017 (2004)]
• Etching and Cathodoluminescence Studies of Znse
• Excess low-frequency noise in AlGaN/GaN-based high-electron-mobility transistors
• Experimental Measurement of the Elastic Constants of GdScO₃ via Resonant Ultrasound Spectroscopy Utilizing Ab Initio Calculations
• Explosive Crystallization in Amorphous Si Initiated by Long Pulse Width Laser Irradiation
• Extended Defects in Epitaxial Sc₂ O₃ Films Grown on (111) Si
• Fabrication of 20-Nm Structures in Gaas
• Fabrication of Nanoperiodic Surface Structures by Controlled Etching of Dislocations in Bicrystals
• Fabrication of Small Laterally Patterned Multiple Quantum-Wells
• Fabrication of Thin-Film Metal Nanobridges
• Fabrication of arrays of large step-free regions on Si(001)
• Fabrication of bi-periodic sinusoidal structures on Si
• Fabrication of nanoperiodic surface structures by controlled etching of dislocations in bicrystals
• Fabrication of oriented polymeric nanofibers on planar surfaces by electrospinning
• Femtosecond laser-drilled capillary integrated into a microfluidic device
• Ferroelectricity in Nonstoichiometric SrTiO₃ Films Studied by Ultraviolet Raman Spectroscopy
• Ferroelectricity in the Dion-Jacobson CsBiNb2O7 from first principles
• Formation of a p-type quantum dot at the end of an n-type carbon nanotube
• Frequency Dispersion in Capacitance-voltage Characteristics of AlGaN/GaN Heterostructures
• Frequency entrainment for micromechanical oscillator
• Frequency shift imaging of quantum dots with single-electron resolution
• Frequency-tunable micromechanical oscillator
• Furnace gas-phase chemistry of silicon oxynitridation in N2O
• GaN/AlN-based quantum-well infrared photodetector for 1.55 mu m
• Gaas Integrated-Circuits by Selected-Area Molecular-Beam Epitaxy
• Gaas/Gaalas Quantum-Well Laser with a Lateral Spatial Variation in Thickness Grown by Metalorganic Chemical Vapor-Deposition
• Gas-Phase Reactions of Trimethylamine Alane in Low-Pressure Organometallic Vapor-Phase Epitaxy of Algaas
• Gating of an organic transistor through a bilayer lipid membrane with ion channels
• Generating Near-Earth-Core Pressures with Type II-a Diamonds
• Germanium nanowire transistors with ethylene glycol treated poly(3,4-ethylenedioxythiophene): poly(styrene sulfonate) contacts
• Graded Band-Gap P/N A1GaAs Solar-Cells Grown by Organometallic Vapor-Phase Epitaxy
• Graded Ingaas/Gaas Strained-Layer Single-Quantum-Well Laser
• Graded-Index Pt-Al2o3 Composite Solar Absorbers
• Graded-Index Separate-Confinement Ingaas/Gaas Strained-Layer Quantum-Well Laser Grown by Metalorganic Chemical Vapor-Deposition
• Grain Boundary Misorientation Angles and Stress-Induced Voiding in Oxide Passivated Copper Interconnects
• Green electroluminescence from an ionic iridium complex
• Green emission from Er-doped GaN powder
• Growth and Properties of Yba2cu3o7 Thin-Films on Vicinal and Polycrystalline Mgo Substrates
• Growth and characterization of ultrathin zirconia dielectrics grown by ultraviolet ozone oxidation
• Growth of Gaas-Al-Gaas by Migration-Enhanced Epitaxy
• Growth of Homoepitaxial SrTiO₃ Thin Films by Molecular-Beam Epitaxy
• Growth of Yba2cu3o7 Thin-Films on Mgo - the Effect of Substrate Preparation
• Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy
• Growth of homoepitaxial SrTiO3 thin films by molecular-beam epitaxy
• Heat capacity measurements of two-dimensional self-assembled hexadecanethiol monolayers on polycrystalline gold
• Heat-Treatment of Semi-Insulating Chromium-Doped Gallium-Arsenide Substrates with Converted Surface Removed Prior to Molecular-Beam Expitaxial Growth
• Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices
• Heterojunction Bipolar-Transistor Using Pseudomorphic Gainas for the Base
• High Efficiency Beta Radioisotope Energy Conversion using Reciprocating Electromechanical Converters with Integrated Betavoltaics
• High Efficiency and Low Threshold Current Strained V-Groove Quantum-Wire Lasers
• High External Efficiency (36 %) 5-um Mesa Isolated GaAs Quantum Well Laser by Organometallic Vapor-Phase Epitaxy
• High dielectric constant Hf-Sn-Ti-O thin films
• High electron mobility AlGaN/GaN heterostructure on (111) Si
• High frequency measurements on an AlN/GaN-based intersubband detector at 1550 and 780 nm
• High performance AlGaN/GaN power switch with HfO2 insulation
• High temperature electrical resistance of substrate-supported single walled carbon nanotubes
• High-Current Lattice-Strained In0.59ga0.41as/In0.52al0.48as Modulation-Doped Field-Effect Transistors Grown by Molecular-Beam Epitaxy
• High-Efficiency Superlattice Graded-Index Separate Confining Heterostructure Lasers with Algaas Single Quantum Wells
• High-Frequency Characterization of Thin-Film Y-Ba-Cu Oxide Superconducting Transmission-Lines
• High-Indium-Content InGaAs Metal-Oxide Semiconductor Capacitor with Amorphous LaAlO₃ Gate Dielectric
• High-Power (1.4w) A1GaInPGraded-Index Separate Confinement Heterostructure Visible (I ~ 658nm) Laser
• High-Pressure Calibration with a New Absolute-Pressure Gauge
• High-Quality Sub-Micron Niobium Tunnel-Junctions with Reactive-Ion-Beam Oxidation
• High-Resolution Electron-Beam Lithography on Caf2
• High-Speed Modulation of Strained-Layer Ingaas-Gaas-Algaas Ridge Wave-Guide Multiple Quantum-Well Lasers
• High-Speed Rotation of Magnets on High-Tc Superconducting Bearings
• High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy
• High-reflectivity, wide-bandwidth optical phase conjugation via four-wave mixing in potassium vapor
• Hot-Carrier and Hot Phonon Effects on High-Speed Quantum-Well Lasers
• Hot-electron transport in 4H-SiC
• Humidity sensors based on pentacene thin-film transistors
• Hysteretic Levitation Forces in Superconducting Ceramics
• Improved Photo-Luminescence of Organo-Metallic Vapor-Phase Epitaxial Algaas Using a New Gettering Technique on the Arsine Source
• Improved electron-beam patterning of Si with self-assembled monolayers
• Improvement of Optical Characteristics of Al0.48in0.52as Grown by Molecular-Beam Epitaxy
• Improvement on epitaxial grown of InN by migration enhanced epitaxy
• In-situ Contacts to GaAs Based on InAs
• Influence of Trench Depth on the Misfit Dislocation Density at Strained Epitaxial Layer Interfaces Grown on Patterned Gaas Substrates
• Influence of an Intentional Substrate Misorientation on Deep Electron Traps in Algaas Grown by Molecular-Beam Epitaxy
• Infrared Hot-Electron Transistor with a Narrow Bandpass Filter for High-Temperature Operation
• Integrated waveguide-coupled terahertz microcavity resonators
• Interfacial Coherency and Ferroelectricity of BaTiO₃ /SrTiO₃ Superlattice Films
• Intersubband photoconductivity at 1.6 mu m using a strain-compensated AlN/GaN superlattice
• Intrinsic Superconductor Normal-Metal Superconductor-Like Weak Links in Y1ba2cu3o7-X Thin-Films
• Investigation by Raman-Scattering of the Properties of III-V Compound Semiconductors at High-Temperature
• Investigation of Terbium Scandate as an Alternative Gate Dielectric in Fully Depleted Transistors
• Investigation of the Properties of Organometallic Vapor-Phase Epitaxially Grown A1GaAs/GaAs Heterostructures Using Raman-Scattering
• Josephson Properties of Basal-Plane-Faced Tilt Boundaries in Yba2cu3o7-Delta Thin-Films
• Kinetics of nickel-induced lateral crystallization of amorphous silicon thin-film transistors by rapid thermal and furnace anneals
• Kinetics of silicide-induced crystallization of polycrystalline thin-film transistors fabricated from amorphous chemical-vapor deposition silicon
• Laser stimulated selective area growth of quantum dots
• Laser-Photoinduced Etching of Semiconductors and Metals
• Laser-assisted transfer of silicon by explosive hydrogen release
• Laser-induced amorphization of silicon during pulsed-laser irradiation of TiN/Ti/polycrystalline silicon/SiO2/silicon
• Laser-induced lateral epitaxy in fully depleted silicon-on-insulator junctions
• Laser-induced surface potential transients observed in III-nitride heterostructures
• Linear and Nonlinear Optical Properties of BiFeO₃
• Linear electrooptic effect in cubin silicon-carbide
• Local Crystallographic Texture and Voiding in Passivated Copper Interconnects
• Localized Charge Trapping Due to Adsorption in Nanotube Field-Effect Transistor and its Field-Mediated Transport
• Localized Microwave Resonances in Strained SrTiO₃ Thin Films
• Low Surface Recombination Velocity and Contact Resistance Using p+/p Carbon Doped GaAs Structures
• Low Temperature Magnetism in the Perovskite Substrate DyScO₃
• Low Thermal Conductivity of CsBiNb₂ O₇ Epitaxial Layers
• Low Voltage Performance of Epitaxial BiFeO₃ Films on Si Substrates through Lanthanum Substitution
• Low-energy electron-beam patterning of amine-functionalized self-assembled monolayers
• Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors
• Low-temperature scanning tunneling microscope-induced luminescence of an InGaN/GaN multiquantum well
• Luminescence Line-Shape Broadening Mechanisms in Galnas/Allnas Quantum Wells
• Luminescence dynamics and waveguide applications of europium doped gallium nitride powder
• Macroscopic Surface-Roughness in Metal-Dielectric Composite Films - Photothermal Absorber Applications
• Material Properties of p-type GaAs at Large Dopings
• Material properties of bulk InGaAs and InAlAs/InGaAs heterostructures grown on (111)B and (111)B misoriented by 1 degrees towards < 211 > InP substrates
• Measurement of Nonuniform Distribution of Strain in Ingaas/Gaas Quantum Wires
• Measurement of mechanical resonance and losses in nanometer scale silicon wires
• Measurement of the mean electron-hole pair ionization energy in 4H SiC
• Measurement of the optical absorption spectra of epitaxial graphene from terahertz to visible
• Measurement of ultrafast carrier dynamics in epitaxial graphene
• Measuring electronic structure of wurtzite InN using electron energy loss spectroscopy
• Measuring far-ultraviolet whispering gallery modes with high energy electrons
• Mechanical resonant immunospecific biological detector
• Megabar Pressures with Synthetic Diamonds
• Melt Dynamics of Silicon-on-Sapphire during Pulsed Laser Annealing
• Memorized polarization-dependent light scattering in rare-earth-ion-doped glass
• Metal-Deposition by Electron-Beam Exposure of an Organometallic Film
• Metalorganic Chemical Vapor Deposition of Lead-Free Ferroelectric BiFeO3 Films for Memory Applications
• Methyl Monolayers Improve the Fracture Strength and Durability of Silicon Nanobeams
• Methyl monolayers suppress mechanical energy dissipation in micromechanical silicon resonators
• Micro-Raman Spectroscopy of Electromigration-Induced Oxygen Vacancy Aggregation in Yba2cu3o7-Delta
• Microbeam high angular resolution x-ray diffraction in InGaN/GaN selective-area-grown ridge structures
• Microcontact printing and pattern transfer using trichlorosilanes on oxide substrates
• Microfluidic gating of an organic electrochemical transistor
• Microscopically Textured Optical Storage Media
• Midinfrared intersubband absorption on AlGaN/GaN-based high-electron-mobility transistors
• Misfit Point Defects at the Epitaxial Lu₂ O₃ /(111)Si Interface Revealed by Electron Spin Resonance
• Mixing at 50 GHz using a Single-Walled Carbon Nanotube Transistor
• Modeling of Ge surface segregation in vapor-phase deposited Si1-xGex thin films
• Molecular-Beam Epitaxial Gaas-Alxga1-Xas Heterostructures for Metal-Semiconductor Field-Effect Transistor Applications
• Monolithic Integration of an (Al)Gaas Laser and an Intracavity Electroabsorption Modulator Using Selective Partial Interdiffusion
• Morphology of femtosecond laser-induced structural changes in bulk transparent materials
• N-Depth Profiles in Thin Sio2 Grown or Processed in N2o - the Role of Atomic Oxygen
• Nano-Cavity in a Silicon Waveguide for Ultra Sensitive Detection
• Nano-Scale Thin Single-Crystal Silicon and its Application to Electronics
• Nanocrystalline barium titanate films on flexible plastic substrates via pulsed laser annealing
• Nanofluidic channels with elliptical cross sections formed using a nonlithographic process
• Nanomechanical resonant structures in nanocrystalline diamond
• Nanometer-scale epitaxial strain release in perovskite heterostructures using “SrAlOx” sliding buffer layers
• Nanoscale modification of optical properties in Ge-doped SiO2 glass by electron-beam irradiation
• Nanoscale thin single-crystal silicon and its application to electronics
• Narrow Conducting Channels Defined by Helium Ion-Beam Damage
• Nature and Stability of the (100)Si/LaAlO₃ Interface Probed by Paramagnetic Defects
• Nbn Josephson Tunnel-Junctions for Terahertz Local Oscillators
• Near band-edge transition in aluminum nitride thin films grown by metal organic chemical vapor deposition
• Near-equilibrium growth of thick, high-quality beta-sic by sublimination
• Near-infrared scintillation of xenon by Ni-63 beta decay
• New Display Based on Electrically Induced Index Matching in an Inhomogeneous-Medium
• Nondispersive electron transport in Alq(3)
• Nondispersive hole transport in a polyfluorene copolymer with a mobility of 0.01 cm(2) V-1 s(-1)
• Nonuniformities in GaN/AlN quantum wells
• Nucleation of Amorphous-Germanium from Supercooled Melts
• Nucleation of copper on TiN and SiO2 from the reaction of hexafluoroacetylacetonate copper(I) trimethylvinylsilane
• Observation of a two dimensional electron gas formed in a polarization doped C-face 3C/4H SiC heteropolytype junction
• Observation of deep levels in cubic silicon-carbide
• Observation of magnetization reversal of thin-film permalloy nanostructures using ballistic electron magnetic microscopy
• Observation of magnetization reversal of thin-film permalloy nanostructures using ballistic electron magnetic microscopy
• On the Role of Mobility and Saturated Velocity in the Dynamic Operation of p-i-n and Metal-Semiconductor-Metal Photodectors
• On the origin of the two-dimensional electron gas at the AlGaN/GaN heterostructure interface
• One-Step Two-Level Etching Technique for Monolithic Integrated-Optics
• Optical Band Gap and Magnetic Properties of Unstrained EuTiO>sub>3 Films
• Optical Band Gap of BiFeO₃ Grown by Molecular-Beam Epitaxy
• Optical Properties of Diamond at Pressure of the Center of the Earth
• Optical Properties of Quasi-Tetragonal BiFeO₃ Thin Films
• Optical Reflectivity and Amorphization of GaAs During Decompression from Megabar Pressures
• Optical Spectroscopy of Ultrasmall Structures Etched from Quantum-Wells
• Optical band gap and magnetic properties of unstrained EuTiO3 films
• Optical excitation of nanoelectromechanical oscillators
• Optical wave-guide formed by cubic silicon-carbide on sapphire substrates
• Optical-Properties of AlxIn1-xP Grown by Organometallic Vapor-Phase Epitaxy
• Optical-Properties of Gainas/Allnas Single Quantum Wells
• Optical-Properties of Selectively Absorbing Ni-Al2o3 Composite Films
• Optically pumped parametric amplification for micromechanical oscillators
• Optimizing the Performance of A1GaAs Graded Index Separate Confining Heterostructure Quantum-Well Lasers
• Organic light-emitting devices with laminated top contacts
• Organometallic Vapor-Phase Epitaxial-Growth of Galnp/Gaas (Algaas) Heterostructures
• Orientation Effect Reduction through Capless Annealing of Self-Aligned Planar Gaas Schottky-Barrier Field-Effect Transistors
• Orientation of pentacene films using surface alignment layers and its influence on thin-film transistor characteristics
• Orientational Dependence of the Electron-Beam Induced Order-Disorder Transition in Quasi-Crystalline Al86mn14
• Outdiffusion of La and Al from Amorphous LaAlO₃ in Direct Contact with Si (001)
• Oxidation of Polycrystalline-Sige Alloys
• Parametric Excitation of Circular Micromachined Polycrystalline Silicon Disks
• Parametric amplification in a torsional microresonator
• Passivation of Deep Level States Caused by Misfit Dislocations in Ingaas on Patterned Gaas
• Pattern formation and shadow instability in collimated energetic molecular beam growth of silicon
• Patterning of Sub-10-nm Ge Islands on Si(100) by Directed Self-Assembly
• Patterning of hydrogen-passivated Si(100) using Ar(P-3(0,2)) metastable atoms
• Phase-Transformation Mechanisms Involved in Excimer-Laser Crystallization of Amorphous-Silicon Films
• Phase-field Model for Epitaxial Ferroelectric and Magnetic Nanocomposite Thin Films
• Photoemission study of Zr- and Hf-silicates for use as high-kappa oxides: Role of second nearest neighbors and interface charge
• Photoluminescence Enhancement of Collodial Quantum Dots Embedded in a Monolithic Microcavity
• Photoluminescence and cathodoluminescence analyses of GaN powder doped with Eu
• Photon Noise Correlations in Electrically Coupled Semiconductor Lasers
• Photovoltaic Effects in BiFeO₃
• Picosecond acoustic measurements of longitudinal wave velocity of submicron polymer films
• Piezoresistive transduction in multilayer polycrystalline silicon resonators
• Polarization Rotation Transitions in Anisotropically Strained SrTiO₃ Thin Films
• Polarization switching using single-walled carbon nanotubes grown on epitaxial ferroelectric thin films
• Positive and Negative Resistless Lithography of Gaas by Electron-Beam Exposure and Thermal Cl-2 Etching
• Postfabrication annealing of pentacene-based photovoltaic cells
• Potential performance of indium-nitride-based devices
• Prediction of Ferroelectricity in BaTiO₃ /SrTiO₃ Superlattices with Domains
• Pressure dependent resonant frequency of micromechanical drumhead resonators
• Probing Mixed Tetragonal/Rhombohedral-Like Monoclinic Phases in Strained Bismuth Ferrite Films by Otpical Second Harmonic Generation
• Production of Yba2cu3o7-Y Superconducting Thin-Films Insitu by High-Pressure Reactive Evaporation and Rapid Thermal Annealing
• Programable molecular orbital states of C-60 from integrated circuits
• Properties of MgB₂ Thin Films with Carbon Doping,
• Pulse autocorrelation measurements based on two- and three-photon conductivity in a GaN photodiode
• Pulsed Laser Assisted Epitaxy of Gexsi1-X Alloys on Si(100)
• Quantum confinement and coherence in a two-dimensional electron gas in a carbon-face 3C-SiC/6H-SiC polytype heterostructure
• Quench Rate Enhancement in Pulsed Laser Melting of Si by Processing under Water
• Random Telegraph Signal in Nanoscale Back-Side Charge Trapping Memories
• Rapid Solidification Studies of a Model Alloy System
• Rapid Thermal Diffusion and Ohmic Contact Using Zinc in GaAs and GaA1As
• Record high-average current from a high-brightness photoinjector
• Reducing the critical current for short-pulse spin-transfer switching of nanomagnets
• Reduction of Be Diffusion in Gaas by Migration-Enhanced Epitaxy
• Reduction of Mosaic Spread using Iridium Interlayers: A Route to Improved Oxide Heteroepitaxy on Silicon
• Reduction of spin transfer by synthetic antiferromagnets
• Relaxor Ferroelectricity in Strained Epitaxial SrTiO₃ Thin Films on DyScO₃ Substrates
• Response-Times and Low-Voltage Behavior of Sns Microbridges
• Role of CsF on electron injection into a conjugated polymer
• Role of Interfacial Nitrogen in Improving Thin Silicon-Oxides Grown in N2o
• Room Temperature Exchange Bias and Spin Valves Based on BiFeO₃ /SrRuO₃ /SrTiO₃ /Si (001) Heterostructures
• Room-Temperature Exciton Electroabsorption in Partially Intermixed Gaas/Algaas Quantum Well Wave-Guides
• Room-Temperature Exciton-Transitions in Partially Intermixed Gaas/Algaas Superlattices
• Scaling Behavior of Yba2cu3o7-Delta Thin-Film Weak Links
• Scanning Kelvin probe microscopy characterization of dislocations in III-nitrides grown by metalorganic chemical vapor deposition
• Scanning thermal microscopy of carbon nanotubes using batch-fabricated probes
• Scanning-Tunneling-Microscopy Based Lithography of Octadecanethiol on Au and Gaas
• Schottky-Barrier Heights of Molecular-Beam Epitaxial Metal-Algaas Structures
• Selective Si epitaxial growth technique employing atomic hydrogen and substrate temperature modulation
• Selectively Emissive Refractory-Metal Surfaces
• Self-Assembled Monolayer Electron-Beam Resist on Gaas
• Self-Assembly of a Homopolymer Mixture via Phase Separation
• Self-Consistent Modeling of Accumulation Layers and Tunneling Currents through very Thin Oxides
• Self-Developing Photoresist Using a Vacuum Ultraviolet F2 Excimer Laser Exposure
• Self-consistent Modeling of Accumulation Layers and Calculation of Tunneling Currents through Very Thin Oxides
• Self-phase modulation at visable wavelengths in nonlinear ZnO channel waveguides
• Sensitivity Enhancement of Thermal Infrared Imagers with Bimaterial Cantilevers Through Piezoelectric Actuation
• Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conducting channels
• Si doping of high-Al-mole fraction AlxGa1-xN alloys with rf plasma-induced molecular-beam-epitaxy
• Simultaneous Diffusion of Zinc and Indium into GaAs - a New Approach for the Formation of Low Resistance Ohmic Contacts to Compound Semiconductors
• Single Charge and Confinement Effects in Nano-Crystal Memories
• Single Charge and Confinement Effects in Nano-Crystal Memories
• Single electrospun regioregular poly(3-hexylthiophene) nanofiber field-effect transistor
• Single step process for epitaxial lateral overgrowth of GaN on SiC and sapphire substrates
• Size and frequency dependent gas damping of nanomechanical resonators
• SmScO₃ Thin Films as an Alternative Gate Dielectric
• Soft Mode Behavior in SrTiO₃ /DyScO₃ Thin Films: Evidence of Ferroelectric and Antiferrodistortive Phase Transitions
• Solid-Phase Epitaxy of Laser Amorphized Silicon
• Spatially selective materials deposition by hydrogen-assisted laser-induced transfer
• Spectroscopic Identification of Si Donors in GaAs
• Spectroscopic Identification of Si Donors in Gaas
• Spin filtering by ultrathin ferromagnetic films
• Spin filtering by ultrathin ferromagnetic films
• Spin-Charge-Lattice Coupling through Resonant Multimagnon Excitations in Multiferroic BiFeO_3>/sub>
• Spin-Transfer Effects in Nanoscale Magnetic Tunnel Junctions
• Spin-filtering multiferroic-semiconductor heterojunctions
• Spin-polarized current switching of a Co thin film nanomagnet
• Spin-torque driven magnetic vortex self-oscillations in perpendicular magnetic fields
• Spin-torque driven magnetic vortex self-oscillations in perpendicular magnetic fields
• Spin-torque ferromagnetic resonance measurements of damping in nanomagnets
• Spin-transfer effects in nanoscale magnetic tunnel junctions
• Spray-deposited poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) top electrode for organic solar cells
• Statistical-Model for Coalescence of Islands in Discontinuous Films
• Steady-state and transient electron transport within bulk wurtzite indium nitride: An updated semiclassical three-valley Monte Carlo simulation analysis
• Strain Relaxation and Surface Migration Effects in InGaAlAs and InGaAsP Selective-area-grown Ridge Waveguides
• Strain Screening by Mobile Vacancies in SrTiO3
• Strained-Layer Ingaas-Gaas-Algaas Graded-Index Separate Confinement Heterostructure Single Quantum Well Lasers Grown by Molecular-Beam Epitaxy
• Stress-based vapor sensing using resonant microbridges
• Structural Evidence for Enhanced Polarization in a Commensurate Short-Period BaTiO₃ / SrTiO₃ Superlattice
• Structural and Thermoelectric Properties of Bi₂ Sr₂ Co₂ O_y Thin Films on LaAlO₃ (100) and Fused Silica Substrates
• Structural and Transport Properties of Epitaxial NaxCoO₂ Thin Films
• Structural investigation of short period GaInAs/InP superlattices
• Structure and Chemistry of the (111)Sc₂ O₃ /(0001) GaN Epitaxial Interface
• Structure of pentacene thin films
• Sub-10 nm lithography with self-assembled monolayers
• Sub-Micron, Vacuum Ultraviolet Contact Lithography with an F2 Excimer Laser
• Submicron selective organometallic vapor phase epitaxy growth using tunable deep UV excitation
• Submicron-Gate In0.52al0.48as/In0.53ga0.47as/In0.52al0.48as Heterojunction Metal-Semiconductor Field-Effect Transistors Grown by Molecular-Beam Epitaxy
• Superconducting Weak-Link Current-Phase Relations
• Superconductive tunneling into NbN deposited near room temperature
• Surface charge accumulation of InN films grown by molecular-beam epitaxy
• Surface potential shield with aperture structure to improve potential measurement accuracy of scanning Kelvin probe microscopy
• Synthesis and Characterization of an n=6 Aurivillius Phase Incorporating Magnetically Active Manganese, Bi₇ (Mn,Ti)₆ O₂₁
• Synthesis of InP-based 1.3 mu m band gap pseudoalloy by organometallic vapor phase epitaxy
• Technique to measure sub-microsecond magnetic field pulses using magnetic (CoPt) thin films
• Temperature- and field-dependent electron and hole mobilities in polymer light-emitting diodes
• Temperature-Dependent Hall and Photoluminescence Evidence for Conduction-Band Edge Shift Induced by Alloying ZnO with Magnesium
• Temperature-dependent internal friction in silicon nanoelectromechanical systems
• Ternary Rare-Earth Metal Oxide High-k Layers on Silicon Oxide
• Tetrastack: Colloidal Diamond-Inspired Structure with Omni-Directional Photonic Band Gap for Low Refractive Index Contrast
• Textured Germanium Optical Storage Medium
• Textured Thin-Film Si Solar Selective Absorbers Using Reactive Ion Etching
• The Bulk Modulus of C₆₀ Molecules and Crystals: A Molecular Mechanic Approach
• The effect of As-4 pressure on material qualities of AlGaAs/GaAs heterostructures grown on (111)B GaAs substrates
• The interstitial fraction of diffusivity of common dopants in Si
• The removal of nitrogen during boron indiffusion in silicon gate oxynitrides
• The role of dislocation scattering in n-type GaN films
• Thermal Stability of Amorphous LaScO₃ Films on Silicon
• Thermal Stability of Electrical and Structural Properties of GaAs-based Metal-Oxide-Semiconductor Capacitors with an Amorphous LaAlO₃ Gate Oxide
• Thermal Stability of Lanthanum Scandate Dielectrics on Si(100)
• Thermal and Plasma-Assisted Nitridation of Gaas(100) Using Nh3
• Thermal emittance and response time of a cesium antimonide photocathode
• Thermal emittance measurements of a cesium potassium antimonide photocathode
• Thermal nitridation enhanced diffusion of Sb and Si(100) doping superlattices
• Thickness Dependence of Structural and Piezoelectric Properties of Epitaxial Pb(Zr_0.52 Ti_0.48 )O₃ Films on Si and SrTiO₃ Substrates
• Thin Silicon-Oxides Grown by Low-Temperature Rf Plasma Anodization and Deposition
• Three-Dimensional Heteroepitaxy in Self-Assembled BaTiO₃ -CoFe₂ O₄ Nanostructures
• Three-dimensional imaging of nonspherical silicon nanoparticles embedded in silicon oxide by plasmon tomography
• Three-dimensional imaging of pore structures inside low-k dielectrics
• Three-dimensional imaging of pore structures inside low-kappa dielectrics
• Time-dependent diffusivity of boron in silicon oxide and oxynitride
• Transport in carbon nanotube p-i-n diodes
• Transport-Properties of High-Angle Grain-Boundary Weak Links in Yba2cu3o7 Thin-Films
• Trapping of Au in Si during Pulsed Laser Irradiation - a Comparison with Ion-Beam Induced Segregation
• Tunable Band Gap in Bi(Fe_1-x Mn_x )O₃ Films
• Tunnel magnetoresistance and spin torque switching in MgO-based magnetic tunnel junctions with a Co/Ni multilayer electrode
• Tunnel magnetoresistance and spin torque switching in MgO-based magnetic tunnel junctions with a Co/Ni multilayer electrode
• Tunneling Escape Time of Electrons from a Quantum Well under the Influence of an Electric-Field
• Tunneling effects and intersubband absorption in AIN/GaN superlattices
• Tunneling spectroscopy studies of treated aluminum oxide tunnel barrier layers
• Twin Formation and Au Segregation during Ion-Beam-Induced Epitaxy of Amorphous Si
• Two-dimensional photonic crystals designed by evolutionary algorithms
• Two-photon optical beam induced current imaging through the backside of integrated circuits
• Two-photon photocurrent imaging of vertical cavity surface emitting lasers
• Two-step exciton dissociation in poly(3-hexylthiophene)/fullerene heterojunctions
• Ultra-low resistive ohmic contacts on n-GaN using Si implantation
• Ultrafast hole burning in intersubband absorption lines of GaN/AlN superlattices
• Ultranarrow Conducting Channels Defined in Gaas-Algaas by Low-Energy Ion Damage
• Using atomic steps to induce texture in polycrystalline pentacene films
• Virus detection using nanoelectromechanical devices
• Width dependence of giant magnetoresistance in Cu/Co multilayer nanowires
• X-Ray Generated Ultrasound
• ZnO Epitaxy on (111) Si using Epitaxial Lu₂ O₃ Buffer Layers
• pH response of GaN surfaces and its application for pH-sensitive field-effect transistors